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数量 | 价钱 (含税) |
---|---|
1+ | CNY13.910 (CNY15.7183) |
10+ | CNY9.610 (CNY10.8593) |
50+ | CNY9.120 (CNY10.3056) |
100+ | CNY8.630 (CNY9.7519) |
250+ | CNY8.570 (CNY9.6841) |
500+ | CNY8.510 (CNY9.6163) |
1000+ | CNY8.450 (CNY9.5485) |
2500+ | CNY8.390 (CNY9.4807) |
产品概述
STGAP2SICSANCTR is a single gate driver which provides isolation between the gate driving channel and the low voltage control and interface circuitry. The gate driver is characterized by 4A capability and rail-to-rail outputs, making the device also suitable for mid and high power applications such as power conversion and motor driver inverters in industrial applications. This device has a single output pin and Miller CLAMP function that prevents gate spikes during fast commutations in half-bridge topologies. This configuration provides high flexibility and bill of material reduction for external components. Applications include Motor driver for home appliances, factory automation, industrial drives and fans, 600/1200V inverters, battery chargers, induction heating, welding, UPS, power supply units, DC-DC converters, power factor correction.
- AEC-Q100 qualified, high voltage rail up to 1200V
- 100V/ns common mode transient immunity (CMTI)
- 45ns overall input-output propagation delay
- Rail-to-rail outputs, 4A Miller CLAMP dedicated pin, UVLO function
- Gate driving voltage up to 26V, 3.3V, 5V TTL/CMOS inputs with hysteresis
- Temperature shut-down protection, standby function
- 4.8kVPK galvanic isolation, UL1577 recognized
- Pulse width distortion is 20ns max at (TJ = -40 to 125°C, VH = 18V, VDD = 5V)
- Common-mode transient immunity is 100V/ns min at (VCM = 1500V, TJ = -40 to 125°C)
- Junction temperature range from -40°C to +150°C, narrow body SO-8 package
技术规格
1放大器
-
8引脚
表面安装
4A
3.1V
-40°C
45ns
-
No SVHC (21-Jan-2025)
隔离式
SiC MOSFET
NSOIC
CMOS, TTL
4A
5.25V
125°C
45ns
AEC-Q100
法律与环境
进行最后一道重要生产流程所在的地区原产地:Taiwan
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书